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Topologically protected ac transport in zigzag silicene nanosystem

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Abstract

The linear ac transport properties are investigated theoretically in zigzag silicene nanoribbon and nanojunction systems. Based on the tight-binding approach and ac response theory, we compute the dc conductance and ac emittance. The topologically protected edge states and eliminated ac emittance are presented around the Dirac point. Emittances as functions of the strength of spin-orbital interaction (SOI) and geometric size of the silicene systems are studied. The results show that the eliminated ac response behavior is induced by the strong SOI and is topologically protected against the size variation.

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Acknowledgements

The authors would like to acknowledge financial support from the National Natural Science Foundation of China (Grant Nos. 11447206, 11504137, 11547168, and 11604293), and the Natural Science Foundation of Jiangsu Province (Grant No. BK20140131). This work was also supported by the Zhejiang University City College Scientific Research Foundation (No. J-16017) and the Key Lab of Information Processing and Intelligent System of Hangzhou.

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Authors and Affiliations

  1. Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, School of Science, Jiangnan University, Wuxi, 214122, People’s Republic of China

    En-Jia Ye, Guo-Feng Yang & Guo-Qing Chen

  2. School of Information and Electrical Engineering, Zhejiang University City College, Hangzhou, 310015, People’s Republic of China

    Yun-Lei Sun

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  1. En-Jia Ye
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  2. Yun-Lei Sun
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Correspondence to Yun-Lei Sun.

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Ye, EJ., Sun, YL., Yang, GF. et al. Topologically protected ac transport in zigzag silicene nanosystem. Appl. Phys. A 123, 297 (2017). https://doi.org/10.1007/s00339-017-0919-0

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