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Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer

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Abstract

The electrical and transport properties of rare-earth Y2O3 on n-type GaN with Au electrode have been investigated by current–voltage and capacitance–voltage techniques at room temperature. The Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode shows a good rectification behavior compared to the Au/n-GaN metal–semiconductor (MS) diode. Statistical analysis showed that a mean barrier height (BH) and ideality factor are 0.78 eV and 1.93, and 0.96 eV and 2.09  for the Au/n-GaN MS and Au/Y2O3/n-GaN MIS diodes, respectively. Results indicate that the high BH is obtained for the MIS diode compared to the MS diode. The BH, ideality factor and series resistance are also estimated by Cheung’s function and Norde method. From the forward current–voltage data, the interface state density (N SS) is estimated for both the MS and MIS Schottky diodes, and found that the estimated N SS is lower for the MIS diode compared to the MS diode. The results reveal that the introduction of Y2O3 interlayer facilitated the reduction of N SS of the Au/n-GaN interface. Experimental results suggest that the Poole–Frenkel emission is a dominant conduction mechanism in the reverse bias region of both Au/n-GaN MS and Au/Y2O3/n-GaN MIS diodes.

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Acknowledgements

This research was supported by the Basic Science Research Program (NRF-2015R1A6A1A04020421) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Republic of Korea, and by a grant from the R&D Program (Grant No. 10045216) for Industrial Core Technology funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea. It was also partially supported by research project of the ETRI (Grant No. B0132-15-1001) by the Ministry of Science, ICT and Future Planning, Republic of Korea.

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Authors and Affiliations

  1. Department of Physics, Sri Venkateswara University, Tirupati, 517 502, India

    C. Venkata Prasad & V. Rajagopal Reddy

  2. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, (SPRC), Chonbuk National University, Jeonju, 561-756, Republic of Korea

    Chel-Jong Choi

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  1. C. Venkata Prasad
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Correspondence to V. Rajagopal Reddy or Chel-Jong Choi.

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Venkata Prasad, C., Rajagopal Reddy, V. & Choi, CJ. Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer. Appl. Phys. A 123, 279 (2017). https://doi.org/10.1007/s00339-017-0894-5

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