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Evaluation of electric field intensity on atom diffusion of Cu/Ta/Si stacks during annealing

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Abstract

Cu/Ta/Si stacks were prepared and, subsequently, annealed at 650 °C with different electric field intensity (0–4.0 kV/cm). The effect of electric field intensity on atomic diffusion was determined from cross-sectional TEM micrographs of Cu/Ta/Si stacks. The atomic diffusion as well as the growth of amorphous layer at Ta/Si interface tended to enhance with the increased electric field intensity at 650 °C. The growth of amorphous layer obeyed a logarithmic law. The reduction in diffusion activation energy Q by increased electric field intensity will accelerate the atom diffusion, leading to significant barrier failure of Cu/Ta/Si stacks.

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Acknowledgments

This work was supported by the Science and Technology Department of Jiangsu Province, the National Natural Science Foundation of China. The authors also thank International Conference TMS 2015 meeting and exhibition.

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Authors and Affiliations

  1. Key Laboratory of Advanced Welding Technology of Jiangsu Province, Jiangsu University of Science and Technology, Zhenjiang, 212003, People’s Republic of China

    L. Wang, L. H. Yu, S. T. Dong, J. Chen & J. H. Xu

  2. Stomatology Department, Nanjing General Hospital of Nanjing Command, Medical School, Nanjing University, Nanjing, 210002, People’s Republic of China

    L. Wang & L. Jin

Authors
  1. L. Wang
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  2. L. Jin
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  3. L. H. Yu
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  4. S. T. Dong
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  5. J. Chen
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  6. J. H. Xu
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Correspondence to L. Wang or J. H. Xu.

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Wang, L., Jin, L., Yu, L.H. et al. Evaluation of electric field intensity on atom diffusion of Cu/Ta/Si stacks during annealing. Appl. Phys. A 122, 3 (2016). https://doi.org/10.1007/s00339-015-9531-3

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