Cu-Ni-Mo alloys were investigated to increase thermal stability against silicide formation. The alloy compositions were chosen such that an insoluble element (Mo) solute was dissolved into Cu via a third element Ni which is soluble in both Cu and Ni. Thin-film Cu-Ni-Mo alloys were prepared by magnetron sputtering. The films with Mo/Ni ratio of 1/12 exhibited low electrical resistivities in combination with high thermal stabilities against silicide formation, in support of a tentative “cluster-plus-glue-atom” model for stable solid solutions. In particular, a (Mo1/13Ni12/13)0.3Cu99.7 sample reached a minimum resistivity of 2.6 μΩ cm after 400°C/1 h annealing and remained highly conductive with resistivities below 3 μΩ cm even after 400°C/40 h annealing. These alloys are promising candidates for future interconnect materials.
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Li, X.N., Liu, L., Zhang, X. et al. Barrierless Cu-Ni-Mo Interconnect Films with High Thermal Stability Against Silicide Formation. J. Electron. Mater. 41, 3447–3452 (2012). https://doi.org/10.1007/s11664-012-2260-x
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DOI: https://doi.org/10.1007/s11664-012-2260-x