Abstract
Palladium was deposited gradually under ultrahigh vacuum onto a well-defined surface of (0001)-oriented n-type GaN, at room temperature. Each deposition step was followed by annealing. Physicochemical properties of the Pd adlayers were in situ investigated prior to and after annealing by the X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and atomic force microscopy techniques. Annealing resulted in the formation of GaPd2 and GaPd intermetallic compounds at 550 °C and at 800 °C. Even for thicker layers, the compounds were strongly dispersed, forming 3D nanostructures. The substrate uncovered by the compounds revealed Ga-rich GaN(0001)-(1 × 1) surface. Formation of Ga-Pd-N bonds or Pd nitrides was not detected at the surface. The Ga-Pd intermetallic compound surface engineered on the GaN(0001) substrate can be used as the strongly dispersed catalyst or a model catalyst.
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Acknowledgments
The authors would like to thank Dr. Stanisław Surma for assistance during preparation of the manuscript. The work was supported by Wroclaw Research Centre EIT+ within the project “The Application of Nanotechnology in Advanced Materials”—NanoMat (POIG.01.01.02-02-002/08) co-financed by the European Regional Development Fund (operational Programme Innovative Economy, 1.1.2).
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Grodzicki, M., Mazur, P., Pers, J. et al. Formation of GaPd2 and GaPd intermetallic compounds on GaN(0001). Appl. Phys. A 120, 1443–1451 (2015). https://doi.org/10.1007/s00339-015-9331-9
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DOI: https://doi.org/10.1007/s00339-015-9331-9