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Electrical properties of palladium-doped CaCu3Ti4O12 ceramics

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Abstract

The effect of doping palladium (Pd) at the Cu site of CaCu3Ti4O12 powders (CCPTO) synthesized by sol–gel technique on electrical properties was studied. XRD analysis revealed the formation of CCTO and CCPTO ceramics with some minor quantities of impurities. SEM micrographs revealed that the grain size decreased with Pd doping. TEM micrographs of CCPTO powder showed the formation of irregular-shaped particles of ~40 nm. The dielectric constant and dielectric loss showed a significant enhancement with Pd doping. A significant decrease in grain-boundary resistance with Pd doping was ascertained by impedance spectroscopy study.

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Acknowledgments

The authors would like to acknowledge Dr K.Dasgupta (Director CGCRI-CSIR) and Dr A.Sen (Head, Sensor and Actuator Division) for publishing this paper.

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Authors and Affiliations

  1. Sensor and Actuator Division, CSIR-CGCRI, Calcutta, India

    Arashdeep Singh, Sk. Md Mursalin, P. Rana & Shrabanee Sen

  2. Department of Ceramic Engineering, I.I.T BHU, Varanasi, India

    Arashdeep Singh

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  1. Arashdeep Singh
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Correspondence to Shrabanee Sen.

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Singh, A., Md Mursalin, S., Rana, P. et al. Electrical properties of palladium-doped CaCu3Ti4O12 ceramics. Appl. Phys. A 120, 1011–1021 (2015). https://doi.org/10.1007/s00339-015-9269-y

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