Abstract
Pure and Zr-substituted CaCu3(Ti1−x Zr x )4O12 (x = 0, 0.01, 0.02, 0.03) ceramics were prepared by the Pechini method. X-ray powder diffraction analysis indicated the formation of single-phase compound, and all the diffraction peaks were completely indexed by the body-centered cubic perovskite-related structure. The effects of Zr4+ ion substituting partially Ti4+ ion on the dielectric properties were investigated in frequency range between 100 Hz and 1 GHz. The low frequency (f ≤ 105 Hz) dielectric constant decreases with Zr substitution and the high frequency (f ≥ 107 Hz) dielectric constant is unchanged. Interestingly, a low-frequency relaxation was observed at room temperature through Zr substitution. The observed dielectric properties in Zr-substituted samples were discussed using the internal barrier layer capacitor model. A corresponding equivalent circuit was adopted to explain the dielectric dispersion. The characteristic frequency of low-frequency relaxation rises due to the decrease of the resistivity of grain boundary with Zr substitution, which is likely responsible for the large low-frequency response at room temperature.
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Project supported by the open foundation of Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education Tianjin University.
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Zhang, L., Wu, Y., Guo, X. et al. Influence of Zr doping on the dielectric properties of CaCu3Ti4O12 ceramics. J Mater Sci: Mater Electron 23, 865–869 (2012). https://doi.org/10.1007/s10854-011-0508-5
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DOI: https://doi.org/10.1007/s10854-011-0508-5