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Role of deposition temperature on performance of HfO x -based resistive switching

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Abstract

The HfO x films grown on Pt substrates were deposited at different temperatures by RF magnetron sputtering. The crystal quality of HfO x film increased with the increasing deposition temperature. Typical bipolar resistive switching (RS) characteristics were observed in prepared samples. The sample deposited at 100 °C showed the best RS performance with large ON/OFF ratio, concentrated distribution of switching voltages and good reliability. Reset-first RS behavior was observed for the 300 °C deposited sample due to the high density of defects and the diffusion of Cu in the film. The distinct RS behaviors are closely related to the microproperties of the films. The possible switching mechanisms were discussed.

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References

  1. H.Y. Lee, P.S. Chen, T.Y. Wu, Y.S. Chen, F. Chen, C.C. Wang, P.J. Tzeng, C.H. Lin, M.J. Tsai, C. Lien, IEEE Electron Device Lett. 30, 703–705 (2009)

    Article  ADS  Google Scholar 

  2. Y. Li, G. Zhao, J. Su, E. Shen, Y. Ren, Appl. Phys. A 104, 1069–1073 (2011)

    Article  ADS  Google Scholar 

  3. C.H. Jia, Q.C. Dong, W.F. Zhang, J. Alloys Compd. 520, 250–254 (2012)

    Article  Google Scholar 

  4. D.S. Lee, Y.H. Sung, I.G. Lee, J.G. Kim, H. Sohn, D.H. Ko, Appl. Phys. A 102, 997–1001 (2011)

    Article  ADS  Google Scholar 

  5. Y. Wang, Q. Liu, S. Long, W. Wang, Q. Wang, M. Zhang, S. Zhang, Y. Li, Q. Zuo, J. Yang, M. Liu, Nanotechnology 21, 045202 (2010)

    Article  ADS  Google Scholar 

  6. I. Salaoru, T. Prodromakis, A. Khiat, C. Toumazou, Appl. Phys. Lett. 102, 013506 (2013)

    Article  ADS  Google Scholar 

  7. K.L. Lin, T.H. Hou, J. Shieh, J.H. Lin, C.T. Chou, Y.J. Lee, J. Appl. Phys. 109, 084104 (2011)

    Article  ADS  Google Scholar 

  8. D.L. Xu, Y. Xiong, M.H. Tang, B.W. Zeng, J.Q. Li, L. Liu, L.Q. Li, S.A. Yan, Z.H. Tang, Microelectron. Eng. 116, 22–25 (2014)

    Article  Google Scholar 

  9. H.Y. Jeong, Y.I. Kim, J.Y. Lee, S.Y. Choi, Nanotechnology 21, 115203 (2010)

    Article  ADS  Google Scholar 

  10. H. Zhang, L. Liu, B. Gao, Y. Qiu, X. Liu, J. Lu, R. Han, J. Kang, B. Yu, Appl. Phys. Lett. 98, 042105 (2011)

    Article  ADS  Google Scholar 

  11. C. Chen, S. Gao, F. Zeng, G.S. Tang, S.Z. Li, C. Song, H.D. Fu, F. Pan, J. Appl. Phys. 114, 014502 (2013)

    Article  ADS  Google Scholar 

  12. A. Mosbah, M.S. Aida, J. Alloys Compd. 515, 149–153 (2012)

    Article  Google Scholar 

  13. A. Sreedhar, M. Hari Prasad Reddy, S. Uthanna, J.F. Pierson, Int. J. ChemTech Res. 6, 1920–1922 (2014)

    Google Scholar 

  14. J.J. Yang, J.P. Strachan, Q. Xia, D.A.A. Ohlberg, P.J. Kuekes, R.D. Kelley, W.F. Stickle, D.R. Stewart, G. Medeiros-Ribeiro, R.S. Williams, Adv. Mater. 22, 4034–4038 (2010)

    Article  Google Scholar 

  15. J.F. Chang, M.H. Hon, Thin Solid Films 386, 79–86 (2001)

    Article  ADS  Google Scholar 

  16. V. Musat, B. Teixeira, E. Fortunato, R.C.C. Monteiro, P. Vilarinho, Surf. Coat. Technol. 180–181, 659–662 (2004)

    Article  Google Scholar 

  17. Z.Q. Xu, H. Deng, Y. Li, Q.H. Guo, Y.R. Li, Mater. Res. Bull. 41, 354–358 (2006)

    Article  Google Scholar 

  18. V. Dave, P. Dubey, H.O. Gupta, R. Chandra, AIP Conf. Proc. 1576, 29–32 (2014)

    ADS  Google Scholar 

  19. N. Takahashi, S. Nonobe, T. Nakamura, J. Solid State Chem. 177, 3944–3948 (2004)

    Article  ADS  Google Scholar 

  20. S. Xing, N. Zhang, Z. Song, Q. Shen, C. Lin, Microelectron. Eng. 66, 451–456 (2003)

    Article  Google Scholar 

  21. G.D. Wilk, R.M. Wallace, J.M. Anthoy, J. Appl. Phys. 87, 484–492 (2000)

    Article  ADS  Google Scholar 

  22. S.Q. Wang, J.W. Mayer, J. Appl. Phys. 64, 4711–4716 (1988)

    Article  ADS  Google Scholar 

  23. J. Dong, S.H. Huang, IEEE Trans. Nanotechnol. 13, 594–599 (2014)

    Article  MathSciNet  ADS  Google Scholar 

  24. J. Kim, S. Lee, K. Lee, H. Na, I.S. Mok, Y. Kim, D.H. Ko, H. Sohn, Microelectron. Eng. 112, 46–51 (2013)

    Article  Google Scholar 

  25. J. Liu, K. Xu, Vac. Sci. Technol. (China) 24, 321–323 (2004)

    Google Scholar 

  26. M. Haemori, T. Nagata, T. Chikyow, Appl. Phys. Express 2, 061401 (2009)

    Article  ADS  Google Scholar 

  27. H.C. Tseng, T.C. Chang, J.J. Huang, Y.T. Chen, P.C. Yang, H.C. Huang, D.S. Gan, N.J. Ho, S.M. Sze, M.J. Tsai, Thin Solid Films 520, 1656–1659 (2011)

    Article  ADS  Google Scholar 

  28. C.Y. Huang, J.H. Jieng, W.Y. Jang, C.H. Lin, T.Y. Tseng, ECS Solid State Lett. 2, P63–P65 (2013)

    Article  Google Scholar 

  29. U. Celano, Y.Y. Chen, D.J. Wouters, G. Groeseneken, M. Jurczak, W. Vandervorst, Appl. Phys. Lett. 102, 121602 (2013)

    Article  ADS  Google Scholar 

  30. L.E. Yu, S. Kim, M.K. Ryu, S.Y. Choi, Y.K. Choi, IEEE Electron Device Lett. 29, 331–333 (2008)

    Article  ADS  Google Scholar 

Download references

Acknowledgments

This work was financially supported by the National Natural Science Foundation of China (No. 51202196), the National Aerospace Science Foundation of China (No. 2013ZF53067), the Natural Science Basic Research Plan in Shaanxi Province of China (No. 2014JQ6204), the Fundamental Research Funds for the Central Universities (No. 3102014JCQ01032) and the 111 Project (No. B08040).

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Correspondence to Tingting Tan.

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Guo, T., Tan, T. & Liu, Z. Role of deposition temperature on performance of HfO x -based resistive switching. Appl. Phys. A 120, 121–125 (2015). https://doi.org/10.1007/s00339-015-9178-0

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