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Preparation and characterization of sol–gel-derived n-ZnO thin film for Schottky diode application

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Abstract

n-ZnO film has been formed on p-Si substrate using sol–gel spin-coating technique. For structural, optical and morphological characterization, the XRD pattern, SEM images and EDX spectra of the n-ZnO film have been obtained. The optical band gap of n-ZnO has been calculated as 3.29 eV. A Schottky diode application of the film has been performed by evaporation of Au on n-ZnO film. It has been seen that the device has exhibited good rectifying behavior. The current–voltage (I–V) and capacitance–voltage (C–V) measurement of the device has been taken as a function of the frequency, at room temperature. Using I–V curve, the ideality factor and barrier height (Φ b) of n-ZnO have been calculated as 1.93 and 0.80 eV, respectively. (Φ b) (C–V) has been found 0.86 eV, at 500 kHz frequency.

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Acknowledgments

This research was supported by the Ataturk University Research Fund, Projects Number 2013/152 and 2013/112. The authors are grateful to Rabia Meryem Yilmaz for technical support.

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Authors and Affiliations

  1. Advanced Materials Research Laboratory, Department of Nanoscience and Nanoengineering, Graduate School of Natural and Applied Sciences, University of Atatürk, 25240, Erzurum, Turkey

    M. Yilmaz

  2. Department of Physics, University of Atatürk, 25240, Erzurum, Turkey

    Z. Caldiran, A. R. Deniz & S. Aydogan

  3. Department of Physics Engineering, University of Istanbul Medeniyet, 34100, Istanbul, Turkey

    A. Turut

  4. Department of Electrical and Electronics Engineering, University of Hakkari, 30000, Hakkari, Turkey

    A. R. Deniz

  5. Department of Electrical and Electronics Engineering, Dumlupinar University, 43500, Simav, Kütahya, Turkey

    R. Gunturkun

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  1. M. Yilmaz
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  4. S. Aydogan
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  5. R. Gunturkun
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Correspondence to M. Yilmaz or S. Aydogan.

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Yilmaz, M., Caldiran, Z., Deniz, A.R. et al. Preparation and characterization of sol–gel-derived n-ZnO thin film for Schottky diode application. Appl. Phys. A 119, 547–552 (2015). https://doi.org/10.1007/s00339-015-8987-5

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  • DOI: https://doi.org/10.1007/s00339-015-8987-5

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