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Competitive emissions of InAs (QDs)/GaInAsP/InP grown by GSMBE

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Abstract

In this letter, the optical properties of InAs (QDs)/GaInAsP on InP substrate grown by gas source molecular beam epitaxy are investigated. By measuring and analyzing the photoluminescence spectra of InAs (QDs)/GaInAsP/InP at different temperatures and excitation powers, the origin of each emission is verified. And it is found that, with the temperature increasing, the emission intensity of GaInAsP wetting layers decreases firstly (T < 150 K) and then increases from 160 K to room temperature. By analyzing the experimental results of three samples with different QDs’ sizes, a competitive emission between InAs QDs and GaInAsP wetting layers is confirmed.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No.11274330, Grant No.61474067, Grant No.11104302, Grant No.11474297), the Shanghai Committee of Science and Technology of China (Grant No. 11ZR1442300), and the China Postdoctoral Science Foundation (Grant No. 20110490075).

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Authors and Affiliations

  1. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China

    Xiaowen Yuan, Qi Wang, Senlin Li & C. Q. Chen

  2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China

    Xiaowen Yuan, Liaoxin Sun, X. D. Luo & Bo Zhang

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  1. Xiaowen Yuan
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  2. Qi Wang
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  3. Liaoxin Sun
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  4. Senlin Li
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  6. X. D. Luo
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  7. Bo Zhang
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Correspondence to X. D. Luo or Bo Zhang.

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Yuan, X., Wang, Q., Sun, L. et al. Competitive emissions of InAs (QDs)/GaInAsP/InP grown by GSMBE. Appl. Phys. A 119, 193–199 (2015). https://doi.org/10.1007/s00339-014-8947-5

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  • DOI: https://doi.org/10.1007/s00339-014-8947-5

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