Abstract
Present report details an analysis of X-ray reflectivity (XRR) for solution processed NiO thin films on Si (100) substrates. The films were annealed at 700–1,000 °C for 1 h in air. XRR data indicated growth of SiO2 layer from ~8 nm at 700 °C to ~66 nm at 1,000 °C along with significant variation of electron density profile. X-ray photoelectron spectroscopy and X-ray diffraction studies were used as supporting studies for phase purity and oxidation states of the NiO thin films as well as interfacial SiO2 layer.
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Acknowledgments
Authors thank the Department of Science and Technology, India for the financial support and Saha Institute of Nuclear Physics, India for facilitating the experiments at the Indian Beamline, Photon Factory, KEK, Japan.
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Mitra, S., Chakraborty, S. & Menon, K.S.R. Specular X-ray reflectivity study of interfacial SiO2 layer in thermally annealed NiO/Si assembly. Appl. Phys. A 117, 1185–1190 (2014). https://doi.org/10.1007/s00339-014-8500-6
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DOI: https://doi.org/10.1007/s00339-014-8500-6