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The role of H-plasma on aluminum-induced crystallization of amorphous silicon

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Abstract

We propose a technique to improve and accelerate aluminum-induced crystallization (AIC) by hydrogen plasma. Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-silicon thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22 to 42 cm2/V s. The possible mechanism of AIC assisted by hydrogen radicals is also discussed.

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Acknowledgments

The authors would like to thank Prof. Helmut Fritzsche for his efforts in the revision of this paper. This research was jointly supported by the NSFC Project of China (Project No. 61076006) and the Flat-Panel Display Special Project of China’s 863 Plan (Project No. 2008AA03A335).

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Authors and Affiliations

  1. The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Institute of Photo-Electronics, Nankai University, Tianjin, 300071, People’s Republic of China

    Juan Li & Chong Luo

  2. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People’s Republic of China

    Hoi Sing Kwok

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  1. Juan Li
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Correspondence to Juan Li.

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Li, J., Luo, C. & Kwok, H.S. The role of H-plasma on aluminum-induced crystallization of amorphous silicon. Appl. Phys. A 116, 851–855 (2014). https://doi.org/10.1007/s00339-013-8180-7

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  • DOI: https://doi.org/10.1007/s00339-013-8180-7

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