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Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe2 thin films

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Abstract

Photoluminescence (PL) characteristics have been studied on undoped and Si-doped CuGaSe2 single crystal thin films grown on GaAs (001) substrate by migration-enhanced epitaxy. Room temperature PL spectrum of an undoped layer clearly shows free excitonic emission bands related to the minimum band-edge and to the split-off valence band, but no discernible emission has been observed in the low energy area. At 4.2 K, the excitonic emission due to the split-off valence band disappears. Instead, two additional emissions appear at 1.68 and 1.715 eV which are attributed to the bound exciton and band-to-acceptor transition. The Si doping to CuGaSe2 produces two additional PL bands around 1.61 and 1.64 eV. These PL bands are attributed to the donor acceptor pair emissions due to the doped Si impurity which probably occupies Cu or Ga sites and intrinsic Cu vacancy.

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Acknowledgements

This work is partly supported by Grants-in-Aid for Scientific Research B (23360163) and Young Scientists B (20760203 and 22760233) from the Japan Society for the Promotion of Science (JSPS) and by the Global COE Program “Practical Chemical Wisdom” from the Ministry of Education, Culture, Sports, Science and Technology (MEXT).

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Authors and Affiliations

  1. School of Science and Engineering, Waseda University, 3-4-1, Okubo, Shinjuku, Tokyo, 169-8555, Japan

    Sathiabama Thiru, Miki Fujita & Yoshiji Horikoshi

  2. Waseda Institute for Advanced Study, Waseda University, 1-6-1, Nishiwaseda, Shinjuku, Tokyo, 169-8050, Japan

    Atsushi Kawaharazuka

  3. CREST, JST, 4-1-8, Honcho Kawaguchi, Saitama, 332-0012, Japan

    Miki Fujita, Atsushi Kawaharazuka & Yoshiji Horikoshi

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  1. Sathiabama Thiru
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  2. Miki Fujita
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  3. Atsushi Kawaharazuka
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  4. Yoshiji Horikoshi
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Correspondence to Sathiabama Thiru.

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Thiru, S., Fujita, M., Kawaharazuka, A. et al. Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe2 thin films. Appl. Phys. A 113, 257–261 (2013). https://doi.org/10.1007/s00339-013-7951-5

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