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Quantum well intermixing of multiple quantum wells on InP by argon plasma bombardment and the sputtered-SiO2 film

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Abstract

A quantum well intermixing process combining inductively-coupled-plasma reactive ion etching (ICP-RIE) and SiO2 sputtering film was investigated for the InGaAsP and InGaAlAs multi-quantum wells (MQWs). Optimal distance is 300-nm-thick for InGaAsP and of 200-nm-thick for InGaAlAs. Between MQWs and the upper cladding by ICP-RIE and bombardment, covering the 300-nm-thick sputtered SiO2 using rapid thermal annealer (RTA) processing resulted in a band-gap blue-shift of 90 nm for InGaAsP and of 60 nm for InGaAlAs.

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Acknowledgements

This work is supported by the Ministry of Education of the Republic of China under the Program for Promoting Academic Excellence of Universities, Chia-91-E-FA08-1-4.

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Authors and Affiliations

  1. Department of Electronics Engineering, National Kaohsiung University of Applied Sciences, No. 415 Chien Kung Rd., Sanmin Dist., Kaohsiung, 807, Taiwan, R.O.C.

    C. L. Chiu

  2. Department of Electrical Engineering, National Chung Hsing University, No. 250 Guoguang Rd., South Dist., Taichung, 402, Taiwan, R.O.C.

    T. S. Lay

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  1. C. L. Chiu
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Correspondence to C. L. Chiu.

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Chiu, C.L., Lay, T.S. Quantum well intermixing of multiple quantum wells on InP by argon plasma bombardment and the sputtered-SiO2 film. Appl. Phys. A 115, 931–936 (2014). https://doi.org/10.1007/s00339-013-7899-5

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