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Effect of SiO2–metal–SiO2 plasmonic structures on InGaAs/GaAs quantum well intermixing

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Abstract

Dielectric–metal–dielectric sandwich structures have been fabricated on top of an InGaAs/GaAs single quantum well (QW) structure to enhance atomic interdiffusion across the QW interfaces at elevated temperature during rapid thermal annealing using a halogen lamp as the heating source. The QW intermixing enhancement is realized during rapid thermal annealing. By placing a properly designed SiO2–Ag–SiO2 structure on top of the QW sample, a blueshift in photoluminescence emission from 920 to 882 nm was observed, larger than that obtained in a SiO2-capped QW annealed at the same condition. Finite-difference time-domain simulation and optical reflectance measurements showed that the enhanced QW intermixing is due to the plasmonic resonance-enhanced light absorption and suppressed light reflection from the SiO2–Ag–SiO2 structure.

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Acknowledgments

The authors acknowledge Grant Number R263000690112, an Academic Research Tier I grant from Singapore’s Ministry of Education.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore

    Jian Huang, Kar Hoo Patrick Tung, Jie Tang & Aaron J. Danner

  2. Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*Star), 3 Research Link, Singapore, 117602, Singapore

    Hongfei Liu & Jinghua Teng

  3. Singapore Institute of Technology, Singapore, 138683, Singapore

    Ning Xiang

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  1. Jian Huang
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  7. Jinghua Teng
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Correspondence to Aaron J. Danner.

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Huang, J., Tung, K.H.P., Tang, J. et al. Effect of SiO2–metal–SiO2 plasmonic structures on InGaAs/GaAs quantum well intermixing. Appl. Phys. A 117, 517–521 (2014). https://doi.org/10.1007/s00339-014-8695-6

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  • DOI: https://doi.org/10.1007/s00339-014-8695-6

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