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Bandgap evolution of GaN1−x As x in the whole composition range

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Abstract

The bandgap evolution of GaN1−x As x in the whole composition range is investigated and a model describing its bandgap energy is developed. It is found that the bandgap evolution is due to two factors. One is the interaction between the impurity band and the Γ conduction band or the Γ valence band of the host materials. The other one is the intraband coupling within the conduction band and separately within the valence band. The former is dominant in the As-rich GaNAs and the N-rich GaNAs. The latter plays an important part in the N-rich range and the moderate composition range.

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Acknowledgement

This work is supported by National Nature Science Foundation of China (51102277).

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Authors and Affiliations

  1. School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, 300387, China

    Chuan-Zhen Zhao, Sha-Sha Wang & Ke-Qing Lu

  2. School of Textiles, Tianjin Polytechnic University, Tianjin, 300387, China

    Na-Na Li

  3. College of Science, Civil Aviation University of China, Tianjin, 300300, China

    Tong Wei

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  1. Chuan-Zhen Zhao
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  2. Na-Na Li
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  3. Tong Wei
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Correspondence to Chuan-Zhen Zhao.

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Zhao, CZ., Li, NN., Wei, T. et al. Bandgap evolution of GaN1−x As x in the whole composition range. Appl. Phys. A 115, 927–930 (2014). https://doi.org/10.1007/s00339-013-7891-0

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  • DOI: https://doi.org/10.1007/s00339-013-7891-0

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