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Annealing-induced changes of the 3.31 eV emission in ZnO nanorods

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Abstract

The effect of annealing on the 3.31 eV (A line) emission in ZnO nanorods is studied in detail by temperature-dependent photoluminescence (PL). Annealing results in obvious changes in peak energy and lineshape of the A line, indicating different luminescence origin in the as-grown and annealed ZnO nanorods. In the as-grown nanorods, the A line is a result of competition between free-to-neutral acceptor (FA) transition and the first longitude optical phonon replica of free exciton (FX-1LO) recombination. While for the annealed nanorods, FA transition disappears and the A line is attributed to FX-1LO only. In combination with trace impurity analysis, the results allow us to conclude that the acceptor involved in the FA transition is stacking faults rather than unintentional acceptor impurities.

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Acknowledgements

The authors are grateful to Dr. Chunli Dai (Institute of Metal Research, Chinese Academy of Sciences) for her assistance in SIMS measurements. This work was supported by Natural Science Foundation of China under Grant No. 51172204, and the Fundamental Research Funds for the Central Universities under Grant No. 2012FZA4009.

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  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P.R. China

    Luwei Sun, Haiping He, Shuili Li & Zhizhen Ye

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  1. Luwei Sun
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  2. Haiping He
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Correspondence to Haiping He.

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Sun, L., He, H., Li, S. et al. Annealing-induced changes of the 3.31 eV emission in ZnO nanorods. Appl. Phys. A 115, 879–883 (2014). https://doi.org/10.1007/s00339-013-7883-0

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