Physical properties of high performance fluoride ion conductor BaSnF₄ thin films by pulsed laser deposition

Abstract

This article presents the results on the growth and characterization of BaSnF₄ thin films on glass substrates prepared by pulsed laser deposition technique. The structural results of BaSnF₄ thin film carried out by glancing angle X-ray diffraction technique indicates the formation of the film with similar structure (tetragonal, P₄/nmm) to the bulk target material. The absorption coefficient and band gap of the film is determined by suitable analysis of the transmittance spectra. The transport properties of the thin films are studied using impedance spectroscopy in the temperature range of 323–573 K. The frequency-dependent imaginary part of impedance plot shows that the conductivity relaxation is non-Debye in nature. The scaling behavior of the imaginary part of impedance at various frequencies indicates temperature-independent relaxation behavior.