The performances of silicon solar cell with core–shell p-n junctions of micro-nano pillars fabricated by cesium chloride self-assembly and dry etching

Abstract

Silicon micro-nano pillars are cost-efficiently integrated using twice cesium chloride (CsCl) islands lithography technique and dry etching for solar cell applications. The micro PMMA islands are fabricated by inductively coupled plasma (ICP) dry etching with micro CsCl islands as masks, and the nano CsCl islands with nano sizes then are made on the surface of micro PMMA islands and silicon. By ICP dry etching with the mask of micro PMMA islands and nano CsCl islands, the micro-nano silicon pillars are made and certain height micro pillars are randomly positioned between dense arrays of nano pillars with different morphologies by controlling etching conditions. With 300 nm depth p-n junction detected by secondary-ion mass spectrometry (SIMS), the micro pillars of the diameter about 1 μm form the core–shell p-n junction to maximize utility of p-n junction interface and enable efficient free carrier collection, and the nano tapered pillars of 150 nm diameter are used to decrease reflection by a graded-refractive-index. Compared to single micro or nano pillar arrayed cells, the co-integrated solar cell with micro and nano pillars demonstrates improved photovoltaic characteristic that is a photovoltaic conversion efficiency (PCE) of 15.35 % with a short circuit current density (J _sc) of 38.40 mA/cm² and an open circuit voltage (V _oc) of 555.7 mV, which benefits from the advantages of micro-nano pillar structures and can be further improved upon process optimization.