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Anisotropic longitudinal electron diffusion coefficient in wurtzite gallium nitride

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Abstract

The longitudinal electron diffusion coefficient (D l ) of wurtzite (WZ) gallium nitride (GaN) is calculated by an ensemble Monte Carlo (EMC) method. By using the power spectral density associated with velocity fluctuation, the relationship between D l and electric field strength, frequency, doping concentration and temperature is presented. The anisotropic D l of GaN impacted by anisotropy of the electronic dispersion is also investigated. It has been found that the D l in Γ–A direction (c-direction) is larger than that in Γ–M direction (basal plane) in most cases. For lower electric field, the D l keeps constant at first, then decreases with increasing frequency. However, for higher electric field, the D l firstly approaches a peak value, then decreases with increasing frequency. When the frequency is zero, the D l decreases with the increasing electric field, and then increases until a peak value. Finally, it decreases with increasing electric field again. When the temperature increases, the D l decreases in both directions for increasing scattering rate. A comparison between our calculated diffusion coefficient and the mobility under low electric field by Einstein equation is presented.

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Acknowledgements

This work was supported in part by the Project of National Natural Science Foundation of China (Grant Nos. 60976068, 61076097), in part by Specialized Research Fund for the Doctoral Program of High Education. (Grant No. 20110203110012).

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Authors and Affiliations

  1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices, School of Microelectronics, Xidian University, Xi’an, 710071, China

    Shulong Wang, Hongxia Liu, Jibin Fan, Fei Ma & Xiaoyi Lei

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  1. Shulong Wang
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  2. Hongxia Liu
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Correspondence to Shulong Wang.

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Wang, S., Liu, H., Fan, J. et al. Anisotropic longitudinal electron diffusion coefficient in wurtzite gallium nitride. Appl. Phys. A 112, 933–938 (2013). https://doi.org/10.1007/s00339-012-7451-z

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