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Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal

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Abstract

This paper reports the use of an InAs/GaSb strained layer superlattice (SLS) as an etch stop layer for GaSb substrate removal with a BCl3/SF6 etch chemistry. Optimum chamber conditions were determined by measuring etch rates and selectivities for two types of superlattices. It was found that selectivity of GaSb over a superlattice is maximized if the reactive ion etching (RIE) chamber pressure is maximized and BCl3 is 80 % of the gas mixture. Selectivities of up to about 475 were measured. Greater selectivity was achieved with superlattices composed of thicker InAs layers.

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Acknowledgements

The support from AFOSR Grants FA9550-10-1-0113, FA9550-09-1-0231 and the Global Research Laboratory program is gratefully acknowledged. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility at Los Alamos National Laboratory (Contract DE-AC52-06NA25396) and Sandia National Laboratories (Contract DE-AC04-94AL85000). We also appreciate the use of facilities at the UNM Manufacturing Training and Technology Center (MTTC) and assistance from Harold Madsen.

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  1. Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, 1313 Goddard SE, Albuquerque, NM, 87106, USA

    B. Klein, J. Montoya, N. Gautam & S. Krishna

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  1. B. Klein
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  2. J. Montoya
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  3. N. Gautam
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  4. S. Krishna
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Correspondence to S. Krishna.

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Klein, B., Montoya, J., Gautam, N. et al. Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal. Appl. Phys. A 111, 671–674 (2013). https://doi.org/10.1007/s00339-012-7293-8

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  • DOI: https://doi.org/10.1007/s00339-012-7293-8

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