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Influence of strain on built-in dipole moment in asymmetric In x Ga1−x As quantum dot molecules

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Abstract

Strain effects on a built-in electron-hole dipole moment are investigated in asymmetric In x Ga1−x As coupled quantum dots. We compute electron-hole separation as a function of alloy compositions for both electron and hole resonance cases. It is noted that the inclusion of strain enhances the built-in dipole moments and that the inverted electron-hole alignment is found for electron and hole resonances. Furthermore, the reversal of dipole moments gives rise to different asymmetric Stark shifts in each transition spectrum.

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Acknowledgements

This work was supported by “the Fundamental Research Funds for the Central Universities” and National Science Foundation of China (Nos. 61274100, 60990312, and 11174048).

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Authors and Affiliations

  1. Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai, 200241, China

    Jiqing Wang, Deshuang Shang, Huibing Mao, Jianguo Yu, Qiang Zhao & Pingxiong Yang

  2. Department of Applied Physics, Donghua University, Shanghai, 201620, China

    Huaizhong Xing

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  1. Jiqing Wang
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  2. Deshuang Shang
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  3. Huibing Mao
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  4. Jianguo Yu
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  5. Qiang Zhao
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  7. Huaizhong Xing
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Correspondence to Jiqing Wang.

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Wang, J., Shang, D., Mao, H. et al. Influence of strain on built-in dipole moment in asymmetric In x Ga1−x As quantum dot molecules. Appl. Phys. A 109, 391–394 (2012). https://doi.org/10.1007/s00339-012-7289-4

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  • DOI: https://doi.org/10.1007/s00339-012-7289-4

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