Abstract
The strain effect on the third-harmonic generation (THG) of a two-dimensional GaAs quantum dot has been investigated within the effective mass approximation. For this purpose, first, we have calculated the energy levels and wave function of the system in the presence of Bychkov–Rashba and Dresselhaus terms and strain-dependent term by accomplish the diagonalization method. Then we have computed the THG by an analytical expression. The results illustrate that: (1) there is a maximum in TGH for a special magnetic field corresponding to the anti-crossing magnetic field (Bac). (2) The Bac is not depended on the strain. (3) There is a minimum in TGH at special strain, and we can control the THG by strain and magnetic field.
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Bahramiyan, H. Strain effect on the third-harmonic generation of a two-dimensional GaAs quantum dot in the presence of magnetic field and spin–orbit interaction. Indian J Phys 94, 789–796 (2020). https://doi.org/10.1007/s12648-019-01525-4
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DOI: https://doi.org/10.1007/s12648-019-01525-4