Abstract
Transport characteristics of relativistic electrons through graphene-based d-wave superconducting double barrier junction and ferromagnet/d-wave superconductor/normal metal double junction have been investigated based on the Dirac–Bogoliubov–de Gennes equation. We have first presented the results of superconducting double barrier junction. In the subgap regime, both the crossed Andreev and nonlocal tunneling conductance all oscillate with the bias voltage due to the formation of Andreev bound states in the normal metal region. Moreover, the critical voltage beyond which the crossed Andreev conductance becomes to zero decreases with increasing value of superconducting pair potential α. In the presence of the ferromagnetism, the MR through graphene-based ferromagnet/ d-wave superconductor/normal metal double junction has been investigated. It is shown that the MR increases from exchange splitting h 0=0 to h 0=E F (Fermi energy), and then it goes down. At h 0=E F, MR reaches its maximum 100. In contrast to the case of a single superconducting barrier, Andreev bound states also manifest itself in the zero bias MR, which result in a series of peaks except the maximum one at h 0=E F. Besides, the resonance peak of the MR can appear at certain bias voltage and structure parameter. Those phenomena mean that the coherent transmission can be tuned by superconducting pair potential, structure parameter, and external bias voltage, which benefits the spin-polarized electron device based on the graphene materials.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (Grant Nos. 11147201, 11147197, and 11047108) and the Key Project of Chinese Ministry of Education (Grant No. 211100). The project was also sponsored by the Education Department of Henan Province (Grant No. 2011B140001).
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Bai, C., Wei, KW., Yang, G. et al. Coherent transmission of nodal Dirac fermions through a graphene-based superconducting double barrier junction. Appl. Phys. A 111, 619–628 (2013). https://doi.org/10.1007/s00339-012-7275-x
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DOI: https://doi.org/10.1007/s00339-012-7275-x