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Enhanced visible-light photoactivity of La-doped ZnS thin films

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Abstract

ZnS and La-doped ZnS thin films were successfully synthesized using chemical-bath deposition on conductive glass substrates. The effects of La-doping on the surface morphology, composition, structure and optical properties of the films were investigated. The photocatalytic performances of undoped and doped ZnS films were evaluated by photodegrading methyl orange aqueous solution under both ultraviolet-light and visible-light irradiation. The results show that the stoichiometry ratio and the properties of ZnS can be tailored by the La-doping concentration. An appropriate amount of La-doping effectively extends the absorption edge to visible-light region, which leads to the significant enhancement of the photocatalytic activity of ZnS thin films under visible-light irradiation. The mechanism of enhanced visible-light photoactivity by La-doping is briefly discussed. The present study provides a simple method for designing the highly efficient semiconductor photocatalysts that can effectively utilize sunlight.

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Acknowledgements

This work is supported by TOTO Water Environment Fund of China Environmental Protection Foundation, Science and Technology Plan Projects of Hunan Province (2011SK3217), aid program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province.

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Authors and Affiliations

  1. Department of Applied Physics, Hunan University, Changsha, 410082, China

    Yuan Chen, Gui-Fang Huang, Wei-Qing Huang, B. S. Zou & Anlian Pan

  2. Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha, 410082, China

    Yuan Chen, Gui-Fang Huang, Wei-Qing Huang, B. S. Zou & Anlian Pan

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  1. Yuan Chen
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  2. Gui-Fang Huang
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  3. Wei-Qing Huang
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Correspondence to Gui-Fang Huang or Wei-Qing Huang.

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Chen, Y., Huang, GF., Huang, WQ. et al. Enhanced visible-light photoactivity of La-doped ZnS thin films. Appl. Phys. A 108, 895–900 (2012). https://doi.org/10.1007/s00339-012-6990-7

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  • DOI: https://doi.org/10.1007/s00339-012-6990-7

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