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Enriched optoelectronic properties of cobalt-doped ZnO thin films for photodetector applications

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Abstract

Cobalt-doped ZnO (ZnO:Co) thin films were synthesized using the chemical bath deposition technique for their potential application in ultraviolet (UV) photosensing. All the prepared samples were characterized using XRD, FESEM, EDX, PL, XPS, and UV–Vis absorption techniques. The UV photosensing property of the thin films was examined under the illumination of UV light (365 nm). The structural and morphological investigations reveal that the ZnO:Co samples have a hexagonal wurtzite crystal structure with nanowire morphology. An increase in crystallite size and a decrease in the bandgap of the samples were observed owing to the replacement of the Co2+ ions in the regular sites of Zn2+. The PL spectra show some defect emission peaks in the visible region because of the occurrence of oxygen vacancies, which suggests a high photoabsorption property of the samples. The XPS study was performed to understand the existence of elements and their binding states in the fabricated thin films. The UV photosensing studies reveal that the highest responsivity of 0.918 AW−1 was achieved for the ZnO:Co (1%) sample.

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Acknowledgements

The authors from King Khalid University would like to express their gratitude to the Deanship of Scientific Research at King Khalid University, Abha, Saudi Arabia for funding this work through the Research Groups Program under Grant No. R.G.P.1/397/42.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Manakula Vinayagar Institute of Technology, Kalitheerthalkuppam, 605107, Puducherry, India

    S. Vinoth

  2. Department of Physics, St. Joseph College of Arts and Science, Vaikalipatti, 627808, India

    A. M. S. Arulanantham

  3. Department of Physics, Kalasalingam Academy of Research and Education, Krishnankoil, Virudhunagar, 626126, India

    S. Saravanakumar

  4. Department of Nanotechnology, Noorul Islam Centre for Higher Education, Kumaracoil, Kanyakumari, 629180, Tamil Nadu, India

    R. S. Rimal Isaac

  5. Department of Physics, Sree Sevugan Annamalai College, 630303, Devakottai, India

    N. Soundaram

  6. Department of Physics, Rajah Serfoji Government College (Autonomous), Thanjavur, 613005, Tamil Nadu, India

    N. Chidhambaram

  7. Department of Physics, Indian Institute of Science, 560012, Bengaluru, India

    Devarajan Alagarasan & S. Varadharajaperumal

  8. Optoelectronics Laboratory, Department of Physics, National Institute of Technology, Surathkal, Mangalore, 575025, Karnataka, India

    S. Varadharajaperumal

  9. Advanced Functional Materials and Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, 61413, Abha, Saudi Arabia

    Mohd. Shkir & S. AlFaify

  10. School of Science and Technology, Glocal University, Saharanpur, 247001, Uttar Pradesh, India

    Mohd. Shkir

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  1. S. Vinoth
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Vinoth, S., Arulanantham, A.M.S., Saravanakumar, S. et al. Enriched optoelectronic properties of cobalt-doped ZnO thin films for photodetector applications. J Mater Sci: Mater Electron 32, 27060–27072 (2021). https://doi.org/10.1007/s10854-021-07077-w

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