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Micro-Raman scattering and TEM measurements of crystallization in amorphous and nanocrystalline silicon

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Abstract

In this report, we study crystallization and Raman spectral and transmission electron microscopy (TEM) changes in amorphous and nanocrystalline Si. Micro-Raman spectra combined with TEM show that considerable crystallization occurs in a-Si:H and a-Si(Al) (the structure of aluminum-diffused amorphous Si/Al/c-Si), but no additional crystallization was observed for nc-Si:H, after the exposure to a laser or accelerating electrons. Meanwhile, moving toward lower or higher energy for a-Si:H and nc-Si:H, by contrast, the Raman shift appeared for a-Si(Al) as if it were for single-crystalline Si, in which it remained constant at one energy, as the laser intensity increased or decreased.

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Acknowledgements

This work was supported by a National Research Foundation grant (NRF-313-2008-2-C00278). The author acknowledges Jang Su Kim and Min Soo Shon of Korea University for the Raman scattering and TEM measurements.

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  1. College of Science and Technology, Korea University, Chungnam, 339-700, South Korea

    Jong H. Lyou

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  1. Jong H. Lyou
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Lyou, J.H. Micro-Raman scattering and TEM measurements of crystallization in amorphous and nanocrystalline silicon. Appl. Phys. A 107, 503–508 (2012). https://doi.org/10.1007/s00339-012-6781-1

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