Applied Physics A

, Volume 105, Issue 4, pp 795–800

The effects of a thin film dopant precursor on the structure and properties of femtosecond-laser irradiated silicon

  • Matthew J. Smith
  • Mark Winkler
  • Meng-Ju Sher
  • Yu-Ting Lin
  • Eric Mazur
  • Silvija Gradečak
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DOI: 10.1007/s00339-011-6651-2

Cite this article as:
Smith, M.J., Winkler, M., Sher, MJ. et al. Appl. Phys. A (2011) 105: 795. doi:10.1007/s00339-011-6651-2

Abstract

Femtosecond (fs) laser irradiation of a silicon substrate coated with a thin film is a flexible approach to producing metastable alloys with unique properties, including near-unity sub-band gap absorptance extending into the infrared. However, dopant incorporation from a thin film during fs-laser irradiation is not well understood. We study the thin film femtosecond-laser doping process through optical and structural characterization of silicon fs-laser doped using a selenium thin film, and compare the resulting microstructure and dopant distribution to fs-laser doping with sulfur from a gaseous precursor. We show that a thin film dopant precursor significantly changes the laser-material interactions, modifying both the surface structuring and dopant incorporation processes and in turn affecting p–n diode behavior.

Copyright information

© Springer-Verlag 2011

Authors and Affiliations

  • Matthew J. Smith
    • 1
  • Mark Winkler
    • 2
  • Meng-Ju Sher
    • 2
  • Yu-Ting Lin
    • 3
  • Eric Mazur
    • 2
    • 3
  • Silvija Gradečak
    • 1
  1. 1.Department of Materials Science and EngineeringMassachusetts Institute of TechnologyCambridgeUSA
  2. 2.Department of PhysicsHarvard UniversityCambridgeUSA
  3. 3.School of Engineering and Applied SciencesHarvard UniversityCambridgeUSA

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