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Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers

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Abstract

Processes undergoing in Sc/Si multilayer X-ray mirrors (MXMs) with periods of ∼27 nm and barrier layers of CrB20.3- and 0.7-nm thick within the temperature range of 420–780 K were studied by methods of small-angle X-ray reflectivity (λ=0.154 nm) and cross-sectional transmission electron microscopy. All layers with the exception of Sc ones are amorphous. Barrier layers are stable at least up to a temperature of 625 K and double the activation energy of diffusional intermixing at moderate temperatures. Introduction of barriers improves the thermal stability of Sc/Si MXMs at least by 80 degrees. Diffusion of Si atoms through barrier layers into Sc layers with formation of silicides was shown to be the main degradation mechanism of MXMs. A comparison of the stability for Sc/Si MXMs with different barriers published in the literature is conducted. The ways of further improvement of barrier properties are discussed.

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Authors and Affiliations

  1. National Technical University ‘Kharkiv Polytechnic Institute’, 21 Frunze Street, Kharkiv, 31002, Ukraine

    Y. P. Pershyn, E. N. Zubarev, V. V. Kondratenko, V. A. Sevryukova & S. V. Kurbatova

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  1. Y. P. Pershyn
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Pershyn, Y.P., Zubarev, E.N., Kondratenko, V.V. et al. Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers. Appl. Phys. A 103, 1021–1031 (2011). https://doi.org/10.1007/s00339-011-6384-2

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