Abstract
Agglomeration of Si atoms on the a-Si surface and the low-temperature crystallization of Si, Ge and SixGe1-x films by SR soft x-ray irradiation using 2.4m-length undulator source and the effect of the combination of the excitation of core electron by laser plasma soft x-ray (LPX) and Si surface nano-modification by Xe+ that is generated during LPX irradiation on the crystallization of a-Si are reviewed. The elementary process of the soft x-ray irradiation is the atom-diffusion following the localized excitation of the core electrons and the generation of Coulomb repulsion. For the low-temperature crystallization, the quasi-nuclei are formed via the elementary process. The temperature during the crystallization of Si or Ge by soft x-ray irradiation is approximately one-hundred °C lower than that by the conventional rapid thermal annealing.
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Matsuo, N., Heya, A., Amano, S., Miyamoto, S., Mochizuki, T., Kanda, K. (2013). Surface Nano-Modification and Low-Temperature Crystallization of Si-Related Semiconductors by Soft X-Ray Irradiation. In: Marquis, F. (eds) Proceedings of the 8th Pacific Rim International Congress on Advanced Materials and Processing. Springer, Cham. https://doi.org/10.1007/978-3-319-48764-9_223
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DOI: https://doi.org/10.1007/978-3-319-48764-9_223
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