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Flow pattern defects in germanium-doped Czochralski silicon crystals

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Abstract

The distribution and etching rate of flow pattern defects (FPDs) in germanium- doped Czochralski (GCZ) silicon (Si) wafers with light and heavy dopants—either boron (B) or phosphorus (P)—have been investigated. In the lightly doped (both B and P) Czochralski (CZ) Si crystals, the FPD densities in GCZ Si decrease with the increase of Ge concentration. In the heavily B-doped GCZ Si crystals, the FPDs are denser compared with the heavily B-doped CZ Si, whereas the reverse is true in the heavily P-doped GCZ Si and CZ Si crystals. It is also shown that the etching rates in the lightly doped CZ Si crystals can be slightly enlarged by the Ge doping. It is proposed that, in lightly doped GCZ Si, Ge doping could consume free vacancies and thus form high-density but small-sized voids, while the stress compensation induced by B and Ge atoms could increase the vacancy concentration in heavily B-doped GCZ Si, leading to sparse and large-sized voids.

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    Wubing Xu, Jiahe Chen, Xiangyang Ma & Deren Yang

  2. Institut für Angewandte Physik, Technische Universität Dresden, 01062, Dresden, Germany

    Jiahe Chen

  3. QL Electronics, 20 Gangdong Road, Ningbo Free Trade Zone, Ningbo, 315800, People’s Republic of China

    Longfei Gong & Daxi Tian

Authors
  1. Wubing Xu
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  2. Jiahe Chen
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  3. Xiangyang Ma
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  4. Deren Yang
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  5. Longfei Gong
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  6. Daxi Tian
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Correspondence to Deren Yang.

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Xu, W., Chen, J., Ma, X. et al. Flow pattern defects in germanium-doped Czochralski silicon crystals. Appl. Phys. A 104, 349–355 (2011). https://doi.org/10.1007/s00339-010-6146-6

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  • DOI: https://doi.org/10.1007/s00339-010-6146-6

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