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Fluence dependant formation of β-SiC by ion implantation and thermal annealing

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Abstract

The β-SiC nanocrystals were synthesized by the implantation of carbon ions (C−) into silicon followed by high-temperature annealing. The carbon fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms/cm2 were implanted at an ion energy of 65 keV. It was observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100 °C for 1 h. However, it was observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×1017 atoms/cm2. Above this fluence the amount of β-SiC appears to saturate. The Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and X-ray diffraction (XRD) techniques were used to characterize the samples.

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References

  1. W.V. Muench, I. Pfaffeneder, J. Appl. Phys. 48, 4831 (1977)

    Article  ADS  Google Scholar 

  2. G.A. Slack, J. Appl. Phys. 35, 3460 (1964)

    Article  ADS  Google Scholar 

  3. W.V. Muench, E. Pettenpaul, J. Appl. Phys. 48, 4823 (1977)

    Article  ADS  Google Scholar 

  4. H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burns, J. Appl. Phys. 76, 1363 (1994)

    Article  ADS  Google Scholar 

  5. P.G. Neudeck, J. Electron. Mater. 24, 283 (1995)

    Article  ADS  Google Scholar 

  6. M.M. Rodriguez, A.D. Cano, T.V. Torchynska, J.P. Gomez, G.G. Gasga, G. Polupan, M. Mynbaeva, J. Mater. Sci., Mater. Electron. 19, 682 (2008)

    Article  Google Scholar 

  7. T.V. Torchynska, A.D. Cano, S.J. Sandoval, M. Dybic, S. Ostapenko, M. Mynbaeva, Microelectron. J. 36, 536 (2005)

    Article  Google Scholar 

  8. L.S. Liao, X.M. Bao, Z.F. Yang, N.B. Min, Appl. Phys. Lett. 66, 2382 (1995)

    Article  ADS  Google Scholar 

  9. T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, H. Mimura, Y. Kanemitsu, Appl. Phys. Lett. 64, 226 (1994)

    Article  ADS  Google Scholar 

  10. L. Hoffmann, G. Ziegler, D. Theis, C. Weyrich, J. Appl. Phys. 53, 6962 (1982)

    Article  ADS  Google Scholar 

  11. M. Ikeda, T. Hayakawa, S. Yamagiwa, H. Matsunami, T. Tanaka, J. Appl. Phys. 50, 8215 (1979)

    Article  ADS  Google Scholar 

  12. J. Edmond, H. Kong, A. Suvorov, D. Waltz, C. Carter, Phys. Stat. Sol. (a) 162, 481 (1997)

    Article  ADS  Google Scholar 

  13. I. Golecki, F. Reidinger, J. Marti, Appl. Phys. Lett. 60, 1703 (1992)

    Article  ADS  Google Scholar 

  14. A. Fissel, B. Schroter, W. Richter, Appl. Phys. Lett. 86, 3182 (1995)

    Article  ADS  Google Scholar 

  15. J.A. Borders, S.T. Picraux, W. Beezhold, Appl. Phys. Lett. 18, 509 (1971)

    Article  ADS  Google Scholar 

  16. P. Martin, B. Daudin, M. Dupuy, A. Ermolieff, M. Olivier, A.M. Papon, G. Rolland, J. Appl. Phys. 67, 2908 (1990)

    Article  ADS  Google Scholar 

  17. A. Nejim, P.L.F. Hemment, J. Stoemenos, Appl. Phys. Lett. 66, 2646 (1995)

    Article  ADS  Google Scholar 

  18. K.J. Reeson, P.L.F. Hemment, J. Stoemenos, J. Davis, G.E. Celler, Appl. Phys. Lett. 51, 2242 (1987)

    Article  ADS  Google Scholar 

  19. Z.J. Zhang, H. Naramoto, A. Miyashita, B. Stritzker, J.K.N. Lindner, Phys. Rev. B 58, 12652 (1998)

    Article  ADS  Google Scholar 

  20. P.M. Sarro, Sens. Actuators A, Phys. 82, 210 (2000)

    Article  ADS  Google Scholar 

  21. W.M. Tsang, S.P. Wong, J.K.N. Lindner, J. Appl. Phys. 81, 3942 (2002)

    Google Scholar 

  22. J.K.N. Lindner, Appl. Phys. A 77, 27 (2003)

    Article  ADS  Google Scholar 

  23. N.V. Nguyen, K. Vedam, J. Appl. Phys. 67, 3555 (1990)

    Article  ADS  Google Scholar 

  24. D.J. Brink, J. Camassel, J.B. Malherbe, Thin Solid Films 449, 73 (2004)

    Article  ADS  Google Scholar 

  25. Z.J. Zhang, K. Narumi, H. Naramoto, S. Yamamoto, A. Miyashita, J. Phys. D, Appl. Phys. 32, 2236 (1999)

    Article  ADS  Google Scholar 

  26. T. Kimura, S. Kagiyama, S. Yugo, Thin Solid Films 81, 319 (1981)

    Article  ADS  Google Scholar 

  27. J.K.N. Lindner, K. Volz, U. Preckwinkel, B. Gotz, A. Frohnwieser, B. Rauschenbach, B. Stritzker, Mater. Chem. Phys. 46, 147 (1996)

    Article  Google Scholar 

  28. Y.S. Katharria, S. Kumar, F. Singh, J.C. Pivin, D. Kanjilal, J. Phys. D, Appl. Phys. 39, 3969 (2006)

    Article  Google Scholar 

  29. Y.S. Katharria, F. Singh, P. Kumar, D. Kanjilal, Nucl. Instrum. Methods B 254, 78 (2007)

    Article  ADS  Google Scholar 

  30. R. Middleton, A Negative Ion Cookbook, H.T.M.L. Version, M. Wiplich, http://tvdg10.phy.bnl.gov/COOKBook, 1998

  31. J.P. Biersack, L.G. Haggmark, Nucl. Instrum. Methods B 174, 257 (1980) (Recently updated, the package and its documentation are available at http://www.srim.org)

    Article  Google Scholar 

  32. S.P. Wong, D. Chen, L.C. Ho, H. Yan, R.K.M. Kwok, Nucl. Instrum. Methods B 140, 70 (1998)

    Article  ADS  Google Scholar 

  33. A.R. Bean, R.C. Newman, J. Phys. Chem. Solids 32, 1211 (1971)

    Article  ADS  Google Scholar 

  34. Z. An, R.K.Y. Fu, P. Chen, W. Liu, P.K. Chu, C. Lin, J. Vac. Sci. Technol. B 21, 1375 (2003)

    Article  Google Scholar 

  35. M. Park, C.W. Teng, V. Sakhrani, M.B. McLaurin, R.M. Kolbas, R.C. Sanwald, R.J. Nemanich, J.J. Hren, J.J. Cuomo, J. Appl. Phys. 89, 1130 (2001)

    Article  ADS  Google Scholar 

  36. B.K. Tay, X. Shi, H.S. Tan, H.S. Yang, Z. Sun, Surf. Coat. Technol. 105, 155 (1998)

    Article  Google Scholar 

  37. L. Calcagno, G. Compagnini, G. Foti, M.G. Grimaldi, P. Musumeci, Nucl. Instrum. Methods B 120, 121 (1996)

    Article  ADS  Google Scholar 

  38. C. Serre, A. Perez-Rodriguez, A. Romano-Rodriguez, J.R. Morante, R. Kogler, W. Skorupa, J. Appl. Phys. 77, 2978 (1995)

    Article  ADS  Google Scholar 

  39. JCPDS Data Card 74-2307 (International Centre of Diffraction Data, Swarthmore, 1998)

  40. Y.S. Katharria, S. Kumar, D. Kanjilal, D. Chauhan, J. Ghatak, U. Bhatta, P.V. Satyam, J. Appl. Phys. 105, 014301 (2009)

    Article  ADS  Google Scholar 

  41. A.H. Sari, S. Ghorbani, D. Dorranian, P. Azadfar, A.R. Hojabri, M. Ghoranneviss, Appl. Surf. Sci. 255, 2180 (2008)

    Article  ADS  Google Scholar 

  42. J.K.N. Lindner, in Silicon Carbide, Recent Major Advances, ed. by W.J. Choyke, H. Matsunami, G. Pensl (Springer, Berlin, 2004), pp. 251–277

    Google Scholar 

  43. A.L. Patterson, Phys. Rev. 56, 978 (1939)

    Article  ADS  MATH  Google Scholar 

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Authors and Affiliations

  1. Ion Beam Modification and Analysis Laboratory, Department of Physics, University of North Texas, 1115 Union Circle # 311427, Denton, TX, 76203, USA

    P. R. Poudel, B. Rout & F. D. Mcdaniel

  2. Center for Advanced Research and Technology, University of North Texas, 3940 North Elm street, Suite A-160, Denton, TX, 76207, USA

    D. R. Diercks

  3. Department of Physics and Astronomy, Texas Christian University, Fort Worth, TX, 76129, USA

    Y. M. Strzhemechny

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  1. P. R. Poudel
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  2. B. Rout
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  3. D. R. Diercks
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  4. Y. M. Strzhemechny
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  5. F. D. Mcdaniel
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Correspondence to P. R. Poudel.

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Poudel, P.R., Rout, B., Diercks, D.R. et al. Fluence dependant formation of β-SiC by ion implantation and thermal annealing. Appl. Phys. A 104, 183–188 (2011). https://doi.org/10.1007/s00339-010-6099-9

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  • DOI: https://doi.org/10.1007/s00339-010-6099-9

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