Fabrication and properties of a polymer capacitor made entirely from polyaniline

Abstract

We describe the fabrication and properties of polymer capacitors made entirely from polyaniline, using only heat-treatment techniques. These homo-interface devices feature a conducting-insulating-conducting configuration of polyaniline. Two methods for the fabrication of such capacitors are described including one where fabrication is carried out by a film peeling technique. Polyaniline dielectric formation is described and an equivalent circuit model of the capacitor including its parasitic resistances is discussed as is the volumetric energy storage capacity. The result of measurements of capacitance variation as a function of temperature has also been described. Finally, the action of these capacitors in modifying and generating high-frequency square waveforms is demonstrated.