Abstract
In this paper we study the uniformity of up to 150 mm in diameter wafer-scale III–V epitaxial transfer to the Si-on-insulator substrate through the O2 plasma-enhanced low-temperature (300°C) direct wafer bonding. Void-free bonding is demonstrated by the scanning acoustic microscopy with sub-μm resolution. The photoluminescence (PL) map shows less than 1 nm change in average peak wavelength, and even improved peak intensity (4% better) and full width at half maximum (41% better) after 150 mm in diameter epitaxial transfer. Small and uniformly distributed residual strain in all sizes of bonding, which is measured by high-resolution X-ray diffraction Omega-2Theta mapping, and employment of a two-period InP–InGaAsP superlattice at the bonding interface contributes to the improvement of PL response. Preservation of multiple quantum-well integrity is also verified by high-resolution transmission electron microscopy.
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Open Access This is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License (https://creativecommons.org/licenses/by-nc/2.0), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
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Liang, D., Chapman, D.C., Li, Y. et al. Uniformity study of wafer-scale InP-to-silicon hybrid integration. Appl. Phys. A 103, 213–218 (2011). https://doi.org/10.1007/s00339-010-5999-z
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DOI: https://doi.org/10.1007/s00339-010-5999-z