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Interpretation of transport measurements in ZnO-thin films

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An Erratum to this article was published on 30 November 2010

Abstract

In order to interpret results of temperature dependent Hall measurements in heteroepitaxial ZnO-thin films, we adopted a multilayer conductivity model considering carrier-transport through the interfacial layer with degenerate electron gas as well as the upper part of ZnO layers with lower conductivity. This model was applied to the temperature dependence of the carrier concentration and mobility measured by Hall effect in a ZnO-layer grown on c-sapphire with conventional high-temperature MgO and low-temperature ZnO buffer. We also compared our results with the results of maximum entropy mobility-spectrum analysis (MEMSA). The formation of the highly conductive interfacial layer was explained by analysis of transmission electron microscopy (TEM) images taken from similar layers.

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Authors and Affiliations

  1. Institute of High Frequency Technology, Technical University of Braunschweig, Schleinitzstrasse 22, 38106, Braunschweig, Germany

    Vladimir Petukhov, John Stoemenos, Johan Rothman, Andrey Bakin & Andreas Waag

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  1. Vladimir Petukhov
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  2. John Stoemenos
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  3. Johan Rothman
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  4. Andrey Bakin
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  5. Andreas Waag
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Correspondence to Vladimir Petukhov.

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An erratum to this article can be found at http://dx.doi.org/10.1007/s00339-010-6124-z

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Petukhov, V., Stoemenos, J., Rothman, J. et al. Interpretation of transport measurements in ZnO-thin films. Appl. Phys. A 102, 161–168 (2011). https://doi.org/10.1007/s00339-010-5945-0

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