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Nonvolatile bipolar resistance switching effects in multiferroic BiFeO3 thin films on LaNiO3-electrodized Si substrates

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Abstract

We report on reversible bipolar resistance switching effects in multiferroic BiFeO3 thin films without electroforming. The BiFeO3 thin films with (110) preferential orientation were prepared on LaNiO3-electrodized Si substrates with a Pt/BiFeO3/LaNiO3 device configuration. The resistance ratio of high resistance state (HRS) to low resistance state (LRS) of the devices was as high as three orders of magnitude. The dominant conduction mechanisms of LRS and HRS were dominated by ohmic behavior and trap-controlled space charge limited current, respectively. The resistance switching mechanism of the devices was discussed using a modified Schottky-like barrier model taking into account the movement of oxygen vacancies.

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Authors and Affiliations

  1. Key Laboratory of Optoelectronic Material and Device, Mathematics and Science College, Shanghai Normal University, Shanghai, 200234, P.R. China

    Xinman Chen, Hailei Zhang, Tao Wang, Feifei Wang & Wangzhou Shi

  2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, P.R. China

    Xinman Chen, Guangheng Wu, Ni Qin & Dinghua Bao

Authors
  1. Xinman Chen
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  2. Guangheng Wu
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  3. Hailei Zhang
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  4. Ni Qin
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  5. Tao Wang
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  6. Feifei Wang
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  7. Wangzhou Shi
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  8. Dinghua Bao
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Correspondence to Dinghua Bao.

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Chen, X., Wu, G., Zhang, H. et al. Nonvolatile bipolar resistance switching effects in multiferroic BiFeO3 thin films on LaNiO3-electrodized Si substrates. Appl. Phys. A 100, 987–990 (2010). https://doi.org/10.1007/s00339-010-5910-y

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  • DOI: https://doi.org/10.1007/s00339-010-5910-y

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