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Interface-related resistive switching in BiFeO3 thin films

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Abstract

Polycrystalline BiFeO3 thin films have been grown by pulsed laser deposition on Pt/Ti/SiO2/Si substrates. The microstructures of the thin films were characterized by X-ray-diffraction and scanning electronic microscopy. The resistive switching in BiFeO3 thin films has been systematically investigated by current–voltage measurements. It has been observed that the oxygen ambient pressure during the deposition influences the ON/OFF ratio of the switching. The substrate temperature affects the rectifying behaviour of the thin films, and consequently determines the possibility of resistive switching in BiFeO3 thin films. By varying the thickness of the thin film, it has been revealed that the switching takes place near the electrode/film interface. The mechanism of the observed resistive switching has been attributed to a charge trapping effect at the interface.

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Acknowledgments

This work has been supported by the National Natural Science Foundation of China (NSFC. 51102037), the Fundamental Research Funds for the Central Universities from UESTC (Nos. ZYGX2010J030, ZYGX2011J023), the Specialized Research Fund for the Doctoral Program of Higher Education (No. 20130185110009).

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China

    L. Jin, Y. Shuai, H. Z. Zeng, W. B. Luo, C. G. Wu, W. L. Zhang, X. Q. Pan, P. Zhang & Y. R. Li

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  1. L. Jin
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  2. Y. Shuai
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  3. H. Z. Zeng
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Correspondence to Y. Shuai.

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Jin, L., Shuai, Y., Zeng, H.Z. et al. Interface-related resistive switching in BiFeO3 thin films. J Mater Sci: Mater Electron 26, 1727–1731 (2015). https://doi.org/10.1007/s10854-014-2599-2

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  • DOI: https://doi.org/10.1007/s10854-014-2599-2

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