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Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films

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Abstract

The phase-change characteristics of Ge2Sb2Te5 (GST) films for phase-change random access memory (PCM) devices were improved by incorporating HfO2 into GST film using cosputtering at room temperature. Phase separation (GST-rich nanocrystals were surrounded by HfO2-rich amorphous phase) has been observed in annealed GST-HfO2 composite films and the segregated domains exhibited a relatively uniform size. The reduced reset voltage of GST-HfO2 based cell was due to the reduced programming volume by incorporating HfO2 into GST. This work clearly reveals the highly promising potential of GST-HfO2 composite films for application in PCM.

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Authors and Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Sannian Song, Zhitang Song, Bo Liu, Liangcai Wu & Songlin Feng

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  1. Sannian Song
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  2. Zhitang Song
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  3. Bo Liu
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  4. Liangcai Wu
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  5. Songlin Feng
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Correspondence to Sannian Song.

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Song, S., Song, Z., Liu, B. et al. Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films. Appl. Phys. A 99, 767–770 (2010). https://doi.org/10.1007/s00339-010-5708-y

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  • DOI: https://doi.org/10.1007/s00339-010-5708-y

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