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Soft limiting circuit implementable with a single multi-walled carbon nanotube

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Abstract

Dispersed growth techniques are applied to grow carbon nanotubes between metal pads on silicon wafers. Process conditions are tuned to yield nanotube devices having only one multi-walled carbon nanotube connecting the metal pads. The nonlinear transfer characteristics of these devices are often accompanied with high impedance and low conduction current. These attributes can be utilized for a soft limiting circuit with impedance much higher than conventional silicon-based implementations.

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Authors and Affiliations

  1. Department of Electronic Engineering, National Kaohsiung First University of Science and Technology, 1 University Road, Yuanchau, Kaohsiung, 82445, Taiwan

    Ming-Huei Chen

  2. National Nano Device Laboratories, 26 Prosperity Road I, Science-Based Industrial Park, Hsinchu, 30078, Taiwan

    Jyh-Hua Ting

  3. Institute of Optoelectronics and Solid-State Electronics, National Chia-Yi University, 300 Hsueh-Fu Road, Chiayi, 60004, Taiwan

    Bo-Zhi Yang & Sheng-Ying Yang

  4. Department of Applied Physics, National Chia-Yi University, 300 Hsueh-Fu Road, Chiayi, 60004, Taiwan

    Tsung-Lung Li

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  1. Ming-Huei Chen
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  2. Jyh-Hua Ting
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  3. Bo-Zhi Yang
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  4. Sheng-Ying Yang
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Correspondence to Tsung-Lung Li.

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Chen, MH., Ting, JH., Yang, BZ. et al. Soft limiting circuit implementable with a single multi-walled carbon nanotube. Appl. Phys. A 100, 193–196 (2010). https://doi.org/10.1007/s00339-010-5695-z

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  • DOI: https://doi.org/10.1007/s00339-010-5695-z

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