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Experimental study of electrical properties of ZnO nanowire random networks for gas sensing and electronic devices

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Abstract

In this paper, we report on studying of ZnO nanowire mats as an electrical nanomaterial with particular interest in their interaction with various gas surroundings for gas sensing characteristics. The ZnO nanowires were synthesized on sapphire substrates using a horizontal tube furnace. The techniques of Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray Spectroscopy (EDS), X-Ray Diffraction (XRD), and X-Ray Photoelectron Spectroscopy (XPS) were applied to determine the as-grown ZnO nanowires’ morphological and crystal structures, chemical composition and electronic states. Four-terminal current-voltage (I–V) measurements were used to examine the electrical conductance of the ZnO nanowire mats exposed to various testing gases with reference to the vacuum condition. Gas exposure experiments were conducted in a custom-built environmental chamber, which was filled with different testing gases. We observed the current being significantly influenced with ambient CO gas. The I–V behavior of CO gas was also found to be reversible and repeatable after the chamber evacuation, which indicates that the ZnO nanowire mats can be used for gas sensing purposes. A possible interactive model of nanowires and testing gas molecules is proposed to elucidate the sensing selective and sensitive mechanism for gas sensors.

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Authors and Affiliations

  1. Department of Physics, California State University, Fresno, Fresno, CA, 93740-8031, USA

    D. Zhang, S. K. Lee, R. Devitt & V. Katkanant

  2. Department of Physics, University of Idaho, Moscow, ID, 83844-0903, USA

    S. Chava & C. Berven

Authors
  1. D. Zhang
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  2. S. Chava
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  3. C. Berven
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  4. S. K. Lee
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  5. R. Devitt
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  6. V. Katkanant
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Correspondence to D. Zhang.

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Zhang, D., Chava, S., Berven, C. et al. Experimental study of electrical properties of ZnO nanowire random networks for gas sensing and electronic devices. Appl. Phys. A 100, 145–150 (2010). https://doi.org/10.1007/s00339-010-5567-6

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  • DOI: https://doi.org/10.1007/s00339-010-5567-6

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