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Growth kinetics and polysilicon formation by aluminium-induced crystallization on glass-ceramic substrates

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Abstract

In this work, we present extended structural properties of poly-Si thin films fabricated by aluminium-induced crystallization (AIC) of amorphous silicon (a-Si) on high-temperature glass-ceramic substrates. The silicon nucleation kinetics on glass-ceramic substrates was investigated by optical microscopy. The crystalline quality of the films was studied by micro-Raman spectroscopy as a function of exchange annealing conditions. By means of electron backscattering diffraction (EBSD), we have analyzed the effect of thermal annealing on silicon grain size and its distribution, intra- and inter-grains defects, and on the grains preferential crystallographic orientation. The optimal thermal annealing condition, allowing 100% crystallized polysilicon large grains with an average grain size of 26 μm and 〈100〉 oriented, acquired a thermal budget of 475°C and 8 h.

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References

  1. X.-Z. Bo, N. Yao, S.R. Shieh, T.S. Duffy, J.C. Sturm, J. Appl. Phys. 91, 2910 (2002)

    Article  ADS  Google Scholar 

  2. T. Naguchi, Jpn. J. Appl. Phys. 32, 1584 (1993)

    Article  ADS  Google Scholar 

  3. J.R. Köhler, Laser crystallization of Si and Si-Ge films, in Growth, Characterization and Electronic Application of Si-based Thin Films, Research Signpost, ed. by R.B. Bergmann (2002), p. 39

  4. S. Lee, S. Joo, IEEE Electron Dev. Lett. 17, 160 (1996)

    Article  ADS  Google Scholar 

  5. S.R. Herd, P. Chaudhari, M.H. Brodsky, J. Non-Cryst. Solids 7, 309 (1972)

    Article  ADS  Google Scholar 

  6. O. Nast, A. Hartmann, J. Appl. Phys. 88, 716 (2000)

    Article  ADS  Google Scholar 

  7. A. Slaoui, E. Pihan, M. Rusu, in Proc. 17th EU-PVSEC (2001), p. 1462

  8. W. Wang, Y. Zhao, Y. Xu, X. Luo, M. Yu, Y. Yu, in Proc. 2nd WCPEC (1998), p. 1740

  9. S. Bourdais, F. Mazel, G. Fantozzi, A. Slaoui, Prog. Photovolt., Res. Appl. 7, 437 (1999)

    Article  Google Scholar 

  10. A.G. Aberle, A. Straub, P.I. Widenborg, A.B. Sproul, Y. Huang, P. Campbell, Prog. Photovolt., Res. Appl. 13, 37 (2005)

    Article  Google Scholar 

  11. O. Nast, T. Puzzer, L.M. Koschier, A.B. Sproul, S.R. Wenham, Appl. Phys. Lett. 73, 3214 (1998)

    Article  ADS  Google Scholar 

  12. R. Kishore, A. Shaik, H.A. Naseem, W.D. Brown, J. Vac. Sci. Technol. B 21, 1037 (2003)

    Article  Google Scholar 

  13. L.R. Pinckney, J. Non-Cryst. Solids 255, 171 (1999)

    Article  ADS  Google Scholar 

  14. E. Pihan, A. Slaoui, C. Maurice, J. Cryst. Growth 305, 88 (2007)

    Article  ADS  Google Scholar 

  15. J. Klein, J. Schneider, M. Muske, S. Gall, W. Fuhs, in Proc. 19th EU-PVSEC (2004), p. 1135

  16. J.C. Goldschmidt, K. Roth, N. Chuangsuwanich, A.B. Sproul, B. Vogl, A.G. Aberle, in Proc. 3rd WCPEC (2003), p. 1206

  17. E. Pihan, A. Focsa, A. Slaoui, C. Maurice, Thin Solid Films 511–512, 15 (2006)

    Article  Google Scholar 

  18. A. Focsa, A. Slaoui, E. Pihan, F. Snijkers, P. Leempoel, G. Beaucarne, J. Poortmans, Thin Solid Films 511–512, 404 (2006)

    Article  Google Scholar 

  19. T. Kamins, Polycrystalline Silicon for Integrated Circuits and Displays, 2nd edn. (Kluwer, Norwell, 1998), p. 110

    Google Scholar 

  20. O. Nast, The aluminium-induced exchange forming polycrystalline silicon on glass for thin-film solar cells, Ph.D. thesis, Marburg/Lahn, Germany, 2000

  21. S. Gall, M. Muske, I. Sieber, O. Nast, W. Fuhs, J. Non-Cryst. Solids 299–302, 741 (2002)

    Article  Google Scholar 

  22. D. Crespo, T. Pradell, N. Clavaguera, M.T. Clavaguera-Mora, Mater. Sci. Eng. A 238, 160 (1997)

    Article  Google Scholar 

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Author notes

  1. Ö. Tüzün

    Present address: Physics Department, Muğla University, 48000, Muğla, Turkey

Authors and Affiliations

  1. InESS, UMR 7163 UdS-CNRS, 23 rue du Loess, 67037, Strasbourg Cedex 2, France

    Ö. Tüzün & A. Slaoui

  2. SMS Centre, UMR CNRS 5146, Ecole des Mines de Saint Etienne, 158 Cours Fauriel, 42023, Saint Etienne, France

    C. Maurice

  3. Corning European Technology Center, 7bis avenue de Valvins, 77210, Avon, France

    S. Vallon

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  1. Ö. Tüzün
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  2. A. Slaoui
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  3. C. Maurice
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  4. S. Vallon
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Correspondence to Ö. Tüzün.

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Tüzün, Ö., Slaoui, A., Maurice, C. et al. Growth kinetics and polysilicon formation by aluminium-induced crystallization on glass-ceramic substrates. Appl. Phys. A 99, 53–61 (2010). https://doi.org/10.1007/s00339-009-5506-6

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  • DOI: https://doi.org/10.1007/s00339-009-5506-6

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