Abstract
We report on the growth of NiSi film on Si(001) substrate with an orientation of NiSi[200]//Si[001]. Polarized Raman spectroscopy was used to assign the symmetry of the NiSi Raman peaks. Raman peaks at 213 cm−1, 295 cm−1, and 367 cm−1 are assigned to be A g symmetry and peaks at 196 cm−1, and 254 cm−1 are B 3g symmetry.
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Wan, L., Ren, Y., Tang, B. et al. Polarized Raman spectroscopy study of NiSi film grown on Si(001) substrate. Appl. Phys. A 97, 693–697 (2009). https://doi.org/10.1007/s00339-009-5295-y
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DOI: https://doi.org/10.1007/s00339-009-5295-y