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An isotopic labeling study of the diffusion mechanism during oxidation of Si(100) in water vapor by successive oxidation

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Abstract

The diffusion mechanism during the wet oxidation of Si(100) at 1373 K was investigated by successive oxidations finally containing isotopic water. SiO2 was first thermally grown on Si in non-labeled oxidizing ambient (dry O2 or H2O) followed by isotopic water (H 182 O) to trace 18O species in SiO2. The distributions of 16O and 18O in the oxide film were analyzed by means of secondary ion mass spectroscopy (SIMS). SIMS depth profiles show that there was a wide overlap of both isotopes (18O and 16O) throughout the SiO2 layer, no matter whether the first oxidation step was carried out in dry O2 or H2O, and the concentration gradient of 18O decreased with increasing oxidation time at the second oxidation step by H 182 O. The results suggest that the diffusion mechanism in SiO2 during water vapor oxidation is exchange diffusion; H2O related oxidizing species diffuse through the network with significant exchange with the pre-existing oxygen in it.

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Authors and Affiliations

  1. Department of Materials Science, Fudan University, 220 Handan Road, Shanghai, 200433, P.R. China

    C. Zhong, Y. M. Jiang, J. Gong, B. Deng & J. Li

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  1. C. Zhong
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  2. Y. M. Jiang
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  3. J. Gong
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Zhong, C., Jiang, Y.M., Gong, J. et al. An isotopic labeling study of the diffusion mechanism during oxidation of Si(100) in water vapor by successive oxidation. Appl. Phys. A 97, 671–676 (2009). https://doi.org/10.1007/s00339-009-5286-z

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  • DOI: https://doi.org/10.1007/s00339-009-5286-z

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