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Enhanced photoluminescence from gallium arsenide semiconductor coated with Au nanoparticles

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Abstract

We demonstrate a method for improving photoluminescence of gallium arsenide semiconductor by simply coating a thin layer of Au nanoparticles on its surface. Further focused ion beam bombardment at the sputter-coated Au film was conducted to control the size, the distribution, and the morphology of the Au nanoparticles via the changes of the focused ion-beam irradiation conditions. Photoluminescence of GaAs coated with the Au nanoparticles with average size of 5 nm in diameter is enhanced to about threefold relative to that of pure GaAs. Numerical calculations were conducted based on finite-different time-domain method. Results indicated that the enhancement is mainly attributed to the contribution of local surface plasmon resonance of Au nanoparticles.

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Authors and Affiliations

  1. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Xiuli Zhou

  2. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA

    Xiuli Zhou, Qiangmin Wei, Lumin Wang & Kai Sun

  3. Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI, 48109, USA

    Lumin Wang

  4. Department of Chemical Physics, Kent State University, Kent, OH, 44242, USA

    Bhuwan Joshi & Qihuo Wei

Authors
  1. Xiuli Zhou
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  2. Qiangmin Wei
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  3. Lumin Wang
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  6. Kai Sun
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Correspondence to Kai Sun.

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Zhou, X., Wei, Q., Wang, L. et al. Enhanced photoluminescence from gallium arsenide semiconductor coated with Au nanoparticles. Appl. Phys. A 96, 637–641 (2009). https://doi.org/10.1007/s00339-009-5277-0

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  • DOI: https://doi.org/10.1007/s00339-009-5277-0

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