Abstract
Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the interface and gate leakage properties of the dielectric are investigated. Excellent performances of Al/HfTiO/GeO x N y /n-Ge MOS capacitor with wet–NO surface pretreatment have been achieved with a interface-state density of 2.1×1011 eV−1 cm−2, equivalent oxide charge of −7.67×1011 cm−2 and gate leakage current density of 4.97×10−5 A/cm2 at V g =1 V.
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Xu, J.P., Zou, X., Li, C.X. et al. Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment. Appl. Phys. A 94, 419–422 (2009). https://doi.org/10.1007/s00339-008-4830-6
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DOI: https://doi.org/10.1007/s00339-008-4830-6