Abstract
SBN thin films were grown on MgO and Silicon substrates by PLD and RF-PLD (radiofrequency assisted PLD) starting from single crystal Sr0.6Ba0.4Nb2O6 and ceramic Sr0.5Ba0.5Nb2O6 stoichiometric targets. Morphological and structural analyses were performed on the SBN layers by AFM and XRD and optical properties were measured by spectroellipsometry. The films composition was determined by Rutherford Backscattering Spectrometry. The best set of experimental conditions for obtaining crystalline, c-axis preferential texture and with dominant 31° in-plane orientation relative to the MgO (100) axis is identified.
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Scarisoreanu, N.D., Dinescu, G., Birjega, R. et al. SBN thin films growth by RF plasma beam assisted pulsed laser deposition. Appl. Phys. A 93, 795–800 (2008). https://doi.org/10.1007/s00339-008-4753-2
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DOI: https://doi.org/10.1007/s00339-008-4753-2