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Excimer laser-induced crystallization of CdSe thin films

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Abstract

We have investigated ArF (λ=193 nm) excimer laser-induced crystallization of amorphous CdSe semiconductor thin films. The crystallization has been monitored by a related photoluminescence emission in the free-exciton and defect-band transition regions. For different irradiation conditions, we have observed formation of nanorods, up to 2 μm long, as well as the formation of arrays of CdSe nanobeads with a narrow size distribution and characteristic dimensions corresponding to λ/2 and λ/8. The successful crystallization has also been confirmed by confocal Raman spectroscopy.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Université de Sherbrooke, 2500 boul. de l’Université, Sherbrooke, Québec, J1K 2R1, Canada

    Etienne Shaffer, Dominique Drouin & Jan J. Dubowski

  2. The Edward S. Rogers, Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, Ontario, M5S 3G4, Canada

    Amr S. Helmy

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  1. Etienne Shaffer
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  2. Amr S. Helmy
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  3. Dominique Drouin
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  4. Jan J. Dubowski
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Correspondence to Jan J. Dubowski.

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Shaffer, E., Helmy, A.S., Drouin, D. et al. Excimer laser-induced crystallization of CdSe thin films. Appl. Phys. A 93, 869–874 (2008). https://doi.org/10.1007/s00339-008-4745-2

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  • DOI: https://doi.org/10.1007/s00339-008-4745-2

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