Abstract
Nd:LiYF4 (YLF) thin films were prepared on CaF2 or YLF substrates by pulsed laser deposition, using a KrF laser for ablation of Nd:LiYF4 single-crystal targets. For 10 J/cm2, 450 °C and about 10-6 mbar pressure, transparent and crystalline, highly textured, YLF films were obtained, without oxyfluoride or YF3 contamination. High surface roughness is shown by optical microscopy and interface ion diffusion between film and substrate is evidenced by Rutherford backscattering spectroscopy. Fluorescence properties of the films are quite similar to those of bulk Nd:YLF crystal, which confirms the pure YLF composition and shows good conservation of Nd3+ ion doping rate.
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81.15.Fg; 68.55.Jk; 78.55.Hx
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Garapon, C., Guy, S., Skasasian, S. et al. Nd3+-doped LiYF4 thin films prepared by pulsed laser deposition. Appl. Phys. A 91, 493–499 (2008). https://doi.org/10.1007/s00339-008-4436-z
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DOI: https://doi.org/10.1007/s00339-008-4436-z