Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications
We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr2+ emission in the technologically important 2–2.6 μm spectral range.
Unable to display preview. Download preview PDF.
- 7.S. B Mirov, V.V. Fedorov, K. Graham. I.S. Moskalev, I.T. Sorokina, E. Sorokin, V. Gapontsev, D. Gapontsev, V. V Badikov, V. Panyutin, IEE Proc. Optoelectron. 150, 340 (2003)Google Scholar
- 11.J.T. Cheung, H. Sankur, CRC Crit. Rev. Solid State Mater. Sci. 15, 63 (1988)Google Scholar
- 14.I.V. Korneeva, Sov. Phys. Cryst. 6, 505 (1962)Google Scholar