Applied Physics A

, Volume 91, Issue 2, pp 333–335 | Cite as

Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications

  • J.E. Williams
  • R.P. Camata
  • V.V. Fedorov
  • S.B. Mirov


We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr2+ emission in the technologically important 2–2.6 μm spectral range.


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Copyright information

© Springer-Verlag 2008

Authors and Affiliations

  • J.E. Williams
    • 1
  • R.P. Camata
    • 1
  • V.V. Fedorov
    • 1
  • S.B. Mirov
    • 1
  1. 1.Department of PhysicsUniversity of Alabama at BirminghamBirminghamUSA

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