Abstract
We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr2+ emission in the technologically important 2–2.6 μm spectral range.
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78.66.hf; 78.66.-w; 78.55.-m; 78.66.Bz; 78.20.-e
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Williams, J., Camata, R., Fedorov, V. et al. Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications. Appl. Phys. A 91, 333–335 (2008). https://doi.org/10.1007/s00339-008-4410-9
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DOI: https://doi.org/10.1007/s00339-008-4410-9