Abstract
The transition region width of nanowire heterojunctions and pn-junctions grown using vapor–liquid–solid (VLS) processes has been modeled. With two constituents or dopants I and II, the achievable width or abruptness of the junctions is attributed to the residual I atom/molecule stored in the liquid droplet at the onset of introducing II to grow the junction, and the stored I atom/molecule consumption into the subsequently grown crystal layers. The model yields satisfactory quantitative fits to a set of available Si-Ge junction data. Moreover, the model provides a satisfactory explanation to the relative junction width or abruptness differences between elemental and compound semiconductor junction cases, as well as a guideline for achieving the most desirable pn-junction widths.
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Li, N., Tan, T. & Gösele, U. Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes. Appl. Phys. A 90, 591–596 (2008). https://doi.org/10.1007/s00339-007-4376-z
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DOI: https://doi.org/10.1007/s00339-007-4376-z